Growth and diffusion of abrupt zinc profiles in gallium arsenide and heterojunction bipolar transistor structures grown by organometallic vapor phase epitaxy

DOI PDF 被引用文献1件
  • P. Enquist
    Research Triangle Institute, Research Triangle Park, North Carolina 27709
  • J. A. Hutchby
    Research Triangle Institute, Research Triangle Park, North Carolina 27709
  • T. J. de Lyon
    Department of Electrical Engineering, Duke University, Durham, North Carolina 27706

書誌事項

公開日
1988-05-01
DOI
  • 10.1063/1.340143
公開者
AIP Publishing

この論文をさがす

説明

<jats:p>The growth and diffusion of abrupt Zn profiles in undoped gallium arsenide (GaAs), silicon-doped GaAs, and heterojunction bipolar transistor structures grown by organometallic vapor phase epitaxy have been studied using secondary ion mass spectrometry depth profiling. The depth profiles indicate that abrupt (within 100 Å) turn-on of Zn doping to levels approaching 1020 cm−3 are obtainable, while abrupt turn-off is limited to about two orders of magnitude due to dopant tailing toward the surface resulting from residual Zn in the reactor. The sharp diffusion fronts resulting from post-growth anneals indicate that the Zn diffusion coefficient has a concentration dependence. However, the diffusion of Zn at high concentrations appears to be inhibited by crystal defect kinetics resulting in a relatively concentration-independent Zn diffusion coefficient. The V/III growth ratio did not have an effect on Zn diffusion in undoped or silicon-doped GaAs. The diffusion of Zn in heterojunction bipolar transistor structures differs in that the diffusion of Zn into the GaAs collector is larger by an order of magnitude and decreases with an increase in V/III growth ratio. In addition, the diffusion of Zn into the aluminum gallium arsenide (AlGaAs) emitter is significantly lower and more effectively inhibited by an increase in V/III ratio than the diffusion of Zn into the GaAs collector.</jats:p>

収録刊行物

被引用文献 (1)*注記

もっと見る

詳細情報 詳細情報について

問題の指摘

ページトップへ