High efficiency GaAs thin film solar cells by peeled film technology

Makoto Konagai, Mitsunori Sugimoto, Kiyoshi Takahashi

doi:10.1016/0022-0248(78)90449-9

High efficiency GaAs thin film solar cells by peeled film technology

DOI Web Site Web Site 被引用文献31件

書誌事項

公開日: 1978-12

権利情報

https://www.elsevier.com/tdm/userlicense/1.0/

DOI

10.1016/0022-0248(78)90449-9

公開者: Elsevier BV

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説明

Abstract p-GaAs/n-GaAs thin film concentrator solar cells were fabricated by Peeled Film Technology. This is the first paper that reports the concentration characteristics of thin film solar cells. The energy conversion efficiency of thin film solar cells at a concentration ratio of 109 is 9.4% and the output power density is 0.82 W/cm2 · n-Ga1−xAlxAs/p-GaAs heterojunction thin film solar cells were also fabricated. The initial heterojunction thin film solar cell with a Al mole fraction of 0.5 showed an efficiency of up to 13.5% (AM 1.5). It is proposed that Multi-Peeled Film Technology will give numerous GaAs thin films by selective etching of (GaAl)As/GaAs multi-layered structures.