Facile Synthesis of Highly π-Extended Heteroarenes, Dinaphtho[2,3-<i>b</i>:2‘,3‘-<i>f</i>]chalcogenopheno[3,2-<i>b</i>]chalcogenophenes, and Their Application to Field-Effect Transistors
-
- Tatsuya Yamamoto
- Department of Applied Chemistry, Graduate School of Engineering, Hiroshima University, Higashi-Hiroshima 739-8527, Japan, and Institute for Advanced Materials Research, Hiroshima University, Higashi-Hiroshima 739-8530, Japan
-
- Kazuo Takimiya
- Department of Applied Chemistry, Graduate School of Engineering, Hiroshima University, Higashi-Hiroshima 739-8527, Japan, and Institute for Advanced Materials Research, Hiroshima University, Higashi-Hiroshima 739-8530, Japan
書誌事項
- 公開日
- 2007-02-01
- DOI
-
- 10.1021/ja068429z
- 公開者
- American Chemical Society (ACS)
この論文をさがす
説明
A facile three-step synthetic procedure for highly π-extended heteroarenes, dinaphtho[2,3-b:2‘,3‘-f]thieno[3,2-b]thiophene (DNTT) and dinaphtho[2,3-b:2‘,3‘-f]selenopheno[3,2-b]selenophene (DNSS), was established. Solution UV−vis spectra and electrochemistry indicated that they have relatively low-lying HOMO levels and large HOMO−LUMO energy gaps. OFET devices fabricated with evaporated thin-films of DNTT and DNSS showed excellent FET characteristics in air, and the highest field-effect mobility of DNTT- and DNSS-based OFETs is 2.9 and 1.9 cm2 V-1 s-1, respectively.
収録刊行物
-
- Journal of the American Chemical Society
-
Journal of the American Chemical Society 129 (8), 2224-2225, 2007-02-01
American Chemical Society (ACS)
