Electronic and chemical properties of the c-Si/Al2O3 interface

Florian Werner, Boris Veith, Dimitri Zielke, Lisa Kühnemund, Christoph Tegenkamp, Michael Seibt, Rolf Brendel, Jan Schmidt

doi:10.1063/1.3587227

Electronic and chemical properties of the c-Si/Al2O3 interface

DOI PDF 被引用文献8件

Florian Werner

Institute for Solar Energy Research Hamelin (ISFH) 1 , Am Ohrberg 1, 31860 Emmerthal, Germany
Boris Veith

Institute for Solar Energy Research Hamelin (ISFH) 1 , Am Ohrberg 1, 31860 Emmerthal, Germany
Dimitri Zielke

Institute for Solar Energy Research Hamelin (ISFH) 1 , Am Ohrberg 1, 31860 Emmerthal, Germany
Lisa Kühnemund

Institute for Solid State Physics, Leibniz University Hannover 2 , Appelstr. 2, 30167 Hannover, Germany
Christoph Tegenkamp

Institute for Solid State Physics, Leibniz University Hannover 2 , Appelstr. 2, 30167 Hannover, Germany
Michael Seibt

Georg-August University Göttingen 3 IV. Physical Institute, , Friedrich-Hund-Platz 1, 37077 Göttingen, Germany
Rolf Brendel

Institute for Solar Energy Research Hamelin (ISFH) 1 , Am Ohrberg 1, 31860 Emmerthal, Germany
Jan Schmidt

Institute for Solar Energy Research Hamelin (ISFH) 1 , Am Ohrberg 1, 31860 Emmerthal, Germany

書誌事項

公開日: 2011-06-01

DOI

10.1063/1.3587227

公開者: AIP Publishing

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説明

<jats:p>Using aluminum oxide (Al2O3) films deposited by atomic layer deposition (ALD), the dominant passivation mechanisms at the c-Si/Al2O3 interface, as well as the chemical composition of the interface region, are investigated. The excellent surface passivation quality of thin Al2O3 films is predominantly assigned to a high negative fixed charge density of Qf = − (4 ± 1) × 1012 cm−2, which is located within 1nm of the Si/Al2O3 interface and is independent of the layer thickness. A deterioration of the passivation quality for ultrathin Al2O3 layers is explained by a strong increase in the interface state density, presumably due to an incomplete reaction of the trimethyl-aluminum (TMA) molecules during the first ALD cycles. A high oxygen-to-aluminum atomic ratio resulting from the incomplete adsorption of the TMA molecules is suggested as a possible source of the high negative charge density Qf at the Si/Al2O3 interface.</jats:p>