Ferromagnet (MnAs)/semiconductor (GaAs, AlAs, InAs)/ferromagnet (MnAs) trilayer heterostructures:
書誌事項
- 公開日
- 2001-07
- 権利情報
-
- https://www.elsevier.com/tdm/userlicense/1.0/
- DOI
-
- 10.1016/s0022-0248(01)00899-5
- 公開者
- Elsevier BV
この論文をさがす
説明
Abstract We have successfully grown ferromagnetic-metal (MnAs)/III–V semiconductor (GaAs, AlAs, InAs)/ferromagnetic-metal (MnAs) trilayer heterostructures on GaAs(1 1 1)B substrates by molecular beam epitaxy. In magnetoresistance (MR) measurements in current-in-plane (CIP) geometry, the spin valve effect was clearly observed, which was caused by the change of the magnetization of the two ferromagnetic MnAs layers between parallel and antiparallel directions. All the trilayer structures showed peculiar temperature dependence of the MR, which is very different from the conventional all-metallic magnetic multilayers. The MR ratio was found to be larger with decreasing the thickness and decreasing the energy band gap of the semiconductor spacer layer.
収録刊行物
-
- Journal of Crystal Growth
-
Journal of Crystal Growth 227-228 847-851, 2001-07
Elsevier BV