Injected carrier concentration dependence of the expansion of single Shockley-type stacking faults in 4H-SiC PiN diodes

DOI PDF 被引用文献6件
  • T. Tawara
    National Institute of Advanced Industrial Science and Technology 1 , Onogawa, Tsukuba 305-8569, Japan
  • S. Matsunaga
    National Institute of Advanced Industrial Science and Technology 1 , Onogawa, Tsukuba 305-8569, Japan
  • T. Fujimoto
    Fuji Electric Co., Ltd. 2 , Fuji, Hino 191-8502, Japan
  • M. Ryo
    Fuji Electric Co., Ltd. 2 , Fuji, Hino 191-8502, Japan
  • M. Miyazato
    National Institute of Advanced Industrial Science and Technology 1 , Onogawa, Tsukuba 305-8569, Japan
  • T. Miyazawa
    Central Research Institute of Electric Power Industry 3 , Nagasaka, Yokosuka 240-0196, Japan
  • K. Takenaka
    National Institute of Advanced Industrial Science and Technology 1 , Onogawa, Tsukuba 305-8569, Japan
  • M. Miyajima
    National Institute of Advanced Industrial Science and Technology 1 , Onogawa, Tsukuba 305-8569, Japan
  • A. Otsuki
    Fuji Electric Co., Ltd. 2 , Fuji, Hino 191-8502, Japan
  • Y. Yonezawa
    National Institute of Advanced Industrial Science and Technology 1 , Onogawa, Tsukuba 305-8569, Japan
  • T. Kato
    National Institute of Advanced Industrial Science and Technology 1 , Onogawa, Tsukuba 305-8569, Japan
  • H. Okumura
    National Institute of Advanced Industrial Science and Technology 1 , Onogawa, Tsukuba 305-8569, Japan
  • T. Kimoto
    Kyoto University, Kyotodaigaku-Katsura 4 , Nishikyo 615-8510, Japan
  • H. Tsuchida
    Central Research Institute of Electric Power Industry 3 , Nagasaka, Yokosuka 240-0196, Japan

この論文をさがす

説明

<jats:p>We investigated the relationship between the dislocation velocity and the injected carrier concentration on the expansion of single Shockley-type stacking faults by monitoring the electroluminescence from 4H-SiC PiN diodes with various anode Al concentrations. The injected carrier concentration was calculated using a device simulation that took into account the measured accumulated charge in the drift layer during diode turn-off. The dislocation velocity was strongly dependent on the injected hole concentration, which represents the excess carrier concentration. The activation energy of the dislocation velocity was quite small (below 0.001 eV between 310 and 386 K) over a fixed range of hole concentrations. The average threshold hole concentration required for the expansion of bar-shaped single Shockley-type stacking faults at the interface between the buffer layer and the substrate was determined to be 1.6–2.5 × 1016 cm−3 for diodes with a p-type epitaxial anode with various Al concentrations.</jats:p>

収録刊行物

被引用文献 (6)*注記

もっと見る

詳細情報 詳細情報について

問題の指摘

ページトップへ