Investigation of the mechanism for Ohmic contact formation in Al and Ti/Al contacts to <b> <i>n</i> </b>-type GaN

DOI PDF 被引用文献12件
  • B. P. Luther
    Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802
  • S. E. Mohney
    Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802
  • T. N. Jackson
    Electronic Materials and Processing Research Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16802
  • M. Asif Khan
    APA Optics, Incorporated, Blaine, Minnesota 55449
  • Q. Chen
    APA Optics, Incorporated, Blaine, Minnesota 55449
  • J. W. Yang
    APA Optics, Incorporated, Blaine, Minnesota 55449

書誌事項

公開日
1997-01-06
DOI
  • 10.1063/1.119305
公開者
AIP Publishing

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<jats:p>We report on a study of Al and Ti/Al contacts to n-type GaN. Al contacts on n-GaN (7×1017 cm−3) annealed in forming gas at 600 °C reached a minimum contact resistivity of 8×10−6 Ω cm2 and had much better thermal stability than reported by previous researchers. Ti/Al (35/115 nm) contacts on n-GaN (5×1017 cm−3) had resistivities of 7×10−6 and 5×10−6 Ω cm2 after annealing in Ar at 400 °C for 5 min and 600 °C for 15 s, respectively. Depth profiles of Ti/Al contacts annealed at 400 °C showed that low contact resistance was only achieved after Al diffused to the GaN interface. We propose that the mechanism for Ohmic contact formation in Ti/Al contacts annealed in the 400–600 °C range includes Ti reducing the GaN native oxide and an Al–Ti intermetallic coming into intimate contact with the GaN.</jats:p>

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