Substrate bias effect on the formation of nanocrystalline diamond films by microwave plasma-enhanced chemical vapor deposition
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- Tien-Syh Yang
- Department of Materials Science and Engineering, National Dong Hwa University, Hualien, 974, Taiwan, Republic of China
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- Jir-Yon Lai
- Department of Materials Science and Engineering, National Dong Hwa University, Hualien, 974, Taiwan, Republic of China
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- Ming-Show Wong
- Department of Materials Science and Engineering, National Dong Hwa University, Hualien, 974, Taiwan, Republic of China
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- Chia-Liang Cheng
- Department of Physics, National Dong Hwa University, Hualien, 974, Taiwan, Republic of China
書誌事項
- 公開日
- 2002-08-15
- DOI
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- 10.1063/1.1492864
- 公開者
- AIP Publishing
この論文をさがす
説明
<jats:p>The influence of negative substrate bias on the crystallinity, morphology, and growth rate of the diamond films deposited using microwave plasma-enhanced chemical vapor deposition in 1% CH4/H2 plasma were investigated. The nanocrystalline diamond films were produced exclusively under the biasing at −250 V. With −50 V biasing, faceted (111) microcrystalline diamond films at higher growth rate than no-bias samples were produced. When the biasing between −100 and −200 V, faceted (100) diamond films with decreasing grain size were favored, and the growth rates were gradually reduced along with the increasing biasing. The results indicate that the etching efficiency of H+ ions is enhanced with the increasing kinetic energy obtained from the increasing bias voltage. On the other hand, CHx+ ions at −250 V biasing would have sufficient energy to perform the ion subplantation model to grow the nanocrystalline diamond films by bias-enhanced nucleation.</jats:p>
収録刊行物
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- Journal of Applied Physics
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Journal of Applied Physics 92 (4), 2133-2138, 2002-08-15
AIP Publishing
