Epitaxial ScAlN Etch-Stop Layers Grown by Molecular Beam Epitaxy for Selective Etching of AlN and GaN

DOI PDF 1 Citations

Journal

IEEE Transactions on Semiconductor Manufacturing

IEEE Transactions on Semiconductor Manufacturing 30 (4), 475-479, 2017-11

Institute of Electrical and Electronics Engineers (IEEE)

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Details 詳細情報について

CRID

1363670319065618176
DOI

10.1109/tsm.2017.2749201
ISSN

15582345

08946507
Web Site

http://xplorestaging.ieee.org/ielx7/66/8066394/08026158.pdf?arnumber=8026158
Data Source
- Crossref

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