Biaxial strain dependence of exciton resonance energies in wurtzite GaN

DOI PDF 被引用文献18件
  • Amane Shikanai
    Department of Electrical, Electronics, and Computer Engineering, Waseda University, 3-4-1 Ohkubo, Shinjuku, Tokyo 169, Japan
  • Takashi Azuhata
    Department of Electrical, Electronics, and Computer Engineering, Waseda University, 3-4-1 Ohkubo, Shinjuku, Tokyo 169, Japan
  • Takayuki Sota
    Department of Electrical, Electronics, and Computer Engineering, Waseda University, 3-4-1 Ohkubo, Shinjuku, Tokyo 169, Japan
  • Shigefusa Chichibu
    Faculty of Science and Technology, Science University of Tokyo, 2641 Yamazaki, Noda, Chiba 278, Japan
  • Akito Kuramata
    Optical Semiconductor Devices Laboratory, Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-01, Japan
  • Kazuhiko Horino
    Optical Semiconductor Devices Laboratory, Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-01, Japan
  • Shuji Nakamura
    Department of Research and Development, Nichia Chemical Industries Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774, Japan

書誌事項

公開日
1997-01-01
DOI
  • 10.1063/1.364074
公開者
AIP Publishing

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説明

<jats:p>We have systematically studied the strain dependence of the free-exciton resonance energies in wurtzite GaN by photoreflectance measurements using well-characterized samples. The experimental data have been analyzed using the appropriate Hamiltonian for the valence bands in wurtzite GaN and determined the values of the crystal field splitting, the spin–orbit splitting, the shear deformation potential constants, and the energy gap in the unstrained crystal. Discussions are given on the strain dependence of the energy gaps, of the effective masses, and of the binding energies for the free-exciton ground states as well as on the valence-band parameters.</jats:p>

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