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- Shenghong Huang
- University of New Mexico 1 Department of Earth and Planetary Sciences, , Albuquerque, New Mexico 87131, USA
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- Ganesh Balakrishnan
- University of New Mexico 2 Center for High Technology Materials, , Albuquerque, New Mexico 87106, USA
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- Diana L. Huffaker
- University of California 3 Department of Electrical Engineering and California Nano Systems Institute, , Los Angeles, California 90095, USA
書誌事項
- 公開日
- 2009-05-15
- DOI
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- 10.1063/1.3129562
- 公開者
- AIP Publishing
この論文をさがす
説明
<jats:p>The manuscript reports that the initial strain relaxation of highly mismatched GaSb layers grown on GaAs (001) is governed by the two-dimensional (2D), periodic interfacial misfit (IMF) dislocation array growth mode. Under optimized growth conditions, only pure 90° dislocations are generated along both [110] and [11¯0] directions that are located at GaSb/GaAs interface, which leads to very low threading dislocation density propagated along the growth direction. The long-range uniformity and subsequent strain relaxation of the 2D and periodic IMF array are demonstrated via transmission electron microscopy and scanning transmission electron microscopy images at GaSb/GaAs interface.</jats:p>
収録刊行物
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- Journal of Applied Physics
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Journal of Applied Physics 105 (10), 2009-05-15
AIP Publishing
