Tunnel magnetoresistance with improved bias voltage dependence in lattice-matched Fe/spinel MgAl2O4/Fe(001) junctions

DOI PDF 被引用文献49件
  • Hiroaki Sukegawa
    National Institute for Materials Science (NIMS Magnetic Materials Center, ), 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
  • Huixin Xiu
    National Institute for Materials Science (NIMS Magnetic Materials Center, ), 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
  • Tadakatsu Ohkubo
    National Institute for Materials Science (NIMS Magnetic Materials Center, ), 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
  • Takao Furubayashi
    National Institute for Materials Science (NIMS Magnetic Materials Center, ), 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
  • Tomohiko Niizeki
    National Institute for Materials Science (NIMS Magnetic Materials Center, ), 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
  • Wenhong Wang
    National Institute for Materials Science (NIMS Magnetic Materials Center, ), 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
  • Shinya Kasai
    National Institute for Materials Science (NIMS Magnetic Materials Center, ), 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
  • Seiji Mitani
    National Institute for Materials Science (NIMS Magnetic Materials Center, ), 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
  • Koichiro Inomata
    National Institute for Materials Science (NIMS Magnetic Materials Center, ), 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
  • Kazuhiro Hono
    National Institute for Materials Science (NIMS Magnetic Materials Center, ), 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan

書誌事項

公開日
2010-05-24
DOI
  • 10.1063/1.3441409
公開者
AIP Publishing

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説明

<jats:p>We fabricated fully epitaxial Fe/MgAl2O4/Fe(001) magnetic tunnel junctions using plasma oxidation of an Mg/Al bilayer. The MgAl2O4 showed a (001)-oriented spinel-type structure, and there were few misfit dislocations at the interfaces between the MgAl2O4 and the two Fe layers due to a small lattice mismatch (∼1%). Tunnel magnetoresistance (TMR) ratios up to 117% (165%) were obtained at room temperature (15 K). The bias voltage for one-half of the zero-bias TMR ratio (Vhalf) was relatively large, ranging from 1.0 to 1.3 V at room temperature, which is attributed to the small misfit dislocation density.</jats:p>

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