High-power InGaN single-quantum-well-structure blue and violet light-emitting diodes

DOI PDF 被引用文献23件
  • Shuji Nakamura
    Department of Research and Development, Nichia Chemical Industries, Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774, Japan
  • Masayuki Senoh
    Department of Research and Development, Nichia Chemical Industries, Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774, Japan
  • Naruhito Iwasa
    Department of Research and Development, Nichia Chemical Industries, Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774, Japan
  • Shin-ichi Nagahama
    Department of Research and Development, Nichia Chemical Industries, Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774, Japan

書誌事項

公開日
1995-09-25
DOI
  • 10.1063/1.114359
公開者
AIP Publishing

この論文をさがす

説明

<jats:p>High-power blue and violet light-emitting diodes (LEDs) based on III–V nitrides were grown by metalorganic chemical vapor deposition on sapphire substrates. As an active layer, the InGaN single-quantum-well-structure was used. The violet LEDs produced 5.6 mW at 20 mA, with a sharp peak of light output at 405 nm, and exhibited an external quantum efficiency of 9.2%. The blue LEDs produced 4.8 mW at 20 mA and sharply peaked at 450 nm, corresponding to an external quantum efficiency of 8.7%. These values of the output power and the quantum efficiencies are the highest ever reported for violet and blue LEDs.</jats:p>

収録刊行物

被引用文献 (23)*注記

もっと見る

詳細情報 詳細情報について

問題の指摘

ページトップへ