Porous silicon formation: A quantum wire effect

DOI PDF 被引用文献69件
  • V. Lehmann
    School of Engineering, Duke University, Durham, North Carolina 27706
  • U. Gösele
    School of Engineering, Duke University, Durham, North Carolina 27706

書誌事項

公開日
1991-02-25
DOI
  • 10.1063/1.104512
公開者
AIP Publishing

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説明

<jats:p>Porous silicon layers grown on nondegenerated p-type silicon electrodes in hydrofluoric acid electrolytes are translucent for visible light, which is equivalent to an increased band gap compared to bulk silicon. It will be shown that a two-dimensional quantum confinement (quantum wire) in the very narrow walls between the pores not only explains the change in band-gap energy but may also be the key to better understanding the dissolution mechanism that leads to porous silicon formation.</jats:p>

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