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- J. Mickevičius
- Semiconductor Physics Department and Institute of Applied Research, Vilnius University 1 , Sauletekio 9-III, LT-10222, Vilnius, Lithuania
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- J. Jurkevičius
- Semiconductor Physics Department and Institute of Applied Research, Vilnius University 1 , Sauletekio 9-III, LT-10222, Vilnius, Lithuania
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- K. Kazlauskas
- Semiconductor Physics Department and Institute of Applied Research, Vilnius University 1 , Sauletekio 9-III, LT-10222, Vilnius, Lithuania
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- A. Žukauskas
- Semiconductor Physics Department and Institute of Applied Research, Vilnius University 1 , Sauletekio 9-III, LT-10222, Vilnius, Lithuania
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- G. Tamulaitis
- Semiconductor Physics Department and Institute of Applied Research, Vilnius University 1 , Sauletekio 9-III, LT-10222, Vilnius, Lithuania
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- M. S. Shur
- Department of ECE and CIE, Rensselaer Polytechnic Institute 2 , Troy, New York 12180, USA
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- M. Shatalov
- Department of ECE and CIE, Rensselaer Polytechnic Institute 2 , Troy, New York 12180, USA
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- J. Yang
- Department of ECE and CIE, Rensselaer Polytechnic Institute 2 , Troy, New York 12180, USA
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- R. Gaska
- 3Sensor Electronic Technology, Inc., 1195 Atlas Road, Columbia, South Carolina 29209, USA
書誌事項
- 公開日
- 2012-02-20
- DOI
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- 10.1063/1.3688051
- 公開者
- AIP Publishing
この論文をさがす
説明
<jats:p>Stimulated emission (SE) is studied in AlGaN/AlGaN multiple quantum wells (MQWs) with different Al content grown on sapphire substrate. The spectra of spontaneous and stimulated emission and their transformations with increasing temperature as well as stimulated emission thresholds were measured in the temperature range from 8 to 300 K. Phonon-assisted band broadening in low-Al-content MQWs and double-scaled potential profile in high-Al-content MQWs were observed in the samples and linked with carrier localization conditions. The temperature dependence of the stimulated emission threshold was similar in the samples where the stimulated transitions occur between extended states and in the samples where the transitions occur in localized states. The stimulated emission threshold depends predominantly on the density of nonradiative recombination centers.</jats:p>
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 100 (8), 081902-, 2012-02-20
AIP Publishing
