Low ON-Resistance GaN Schottky Barrier Diode With High <inline-formula> <tex-math notation="LaTeX">$V_{\mathrm{ON}}$ </tex-math> </inline-formula> Uniformity Using LPCVD Si<sub>3</sub>N<sub>4</sub> Compatible Self-Terminated, Low Damage Anode Recess Technology
書誌事項
- 公開日
- 2018-06
- 権利情報
-
- https://ieeexplore.ieee.org/Xplorehelp/downloads/license-information/IEEE.html
- DOI
-
- 10.1109/led.2018.2830998
- 公開者
- Institute of Electrical and Electronics Engineers (IEEE)
この論文をさがす
収録刊行物
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- IEEE Electron Device Letters
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IEEE Electron Device Letters 39 (6), 859-862, 2018-06
Institute of Electrical and Electronics Engineers (IEEE)
