-
- Sen Wang
- China National Academy of Nanotechnology & Engineering Laboratory of Nanoimprint Lithography, , Tianjin 300457, People’s Republic of China
-
- Xiao Zheng Yu
- China National Academy of Nanotechnology & Engineering Laboratory of Nanoimprint Lithography, , Tianjin 300457, People’s Republic of China
-
- Hong Tao Fan
- China National Academy of Nanotechnology & Engineering Laboratory of Nanoimprint Lithography, , Tianjin 300457, People’s Republic of China
書誌事項
- 公開日
- 2007-08-06
- DOI
-
- 10.1063/1.2767990
- 公開者
- AIP Publishing
この論文をさがす
説明
<jats:p>A simple lithographic method is developed to generate large-area antireflective subwavelength structures (SWSs), in which the metal island films are used as masks. Using magnetron sputter deposition, stochastically arranged Ag islands were fabricated on Si substrates with dimensions controlled in the range of 50∼400nm. After reactive ion etching with CF4, Si SWSs were formed, with the same arrangement and density as those of Ag islands. The measured reflectivity was decreased from ∼40% for polished Si to ∼5% for Si SWS surfaces. The residual reflection was thought to be mainly from the bottoms of “U”-shape grooves.</jats:p>
収録刊行物
-
- Applied Physics Letters
-
Applied Physics Letters 91 (6), 2007-08-06
AIP Publishing
