Deposition of device quality silicon dioxide thin films by remote plasma enhanced chemical vapor deposition
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- Sang S. Kim
- Department of Physics, North Carolina State University, Raleigh, North Carolina 27695-8202
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- D. V. Tsu
- Department of Physics, North Carolina State University, Raleigh, North Carolina 27695-8202
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- G. Lucovsky
- Department of Physics, North Carolina State University, Raleigh, North Carolina 27695-8202
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説明
<jats:p>A multichamber system specifically designed for growing Si-based dielectric films on processed and characterized semiconductor surfaces is described. The system consists of a semiconductor surface preparation chamber, an in situ surface analysis chamber, a dielectric deposition chamber, and two load-lock sample introduction chambers. Device quality silicon dioxide thin films have been grown on Si substrates. The electrical and structural properties of these films are discussed.</jats:p>
収録刊行物
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- Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 6 (3), 1740-1744, 1988-05-01
American Vacuum Society
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詳細情報 詳細情報について
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- CRID
- 1363670321222887552
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- DOI
- 10.1116/1.575283
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- ISSN
- 15208559
- 07342101
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- データソース種別
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- Crossref