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The energy-driven paradigm of NMOSFET hot-carrier effects

DOI PDF 2 Citations

Journal

IEEE Transactions on Device and Materials Reliability

IEEE Transactions on Device and Materials Reliability 5 (4), 701-705, 2005-12

Institute of Electrical and Electronics Engineers (IEEE)

Citations (2)*help

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Details 詳細情報について

CRID

1363951793284776064
DOI

10.1109/tdmr.2005.860560
ISSN

15304388
Web Site

http://xplorestaging.ieee.org/ielx5/7298/33275/01573687.pdf?arnumber=1573687
Data Source
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