Trimethylaluminum as the Metal Precursor for the Atomic Layer Etching of Al<sub>2</sub>O<sub>3</sub> Using Sequential, Self-Limiting Thermal Reactions
-
- Younghee Lee
- Department of Chemistry and Biochemistry, ‡Department of Mechanical Engineering, University of Colorado, Boulder, Colorado 80309, United States
-
- Jaime W. DuMont
- Department of Chemistry and Biochemistry, ‡Department of Mechanical Engineering, University of Colorado, Boulder, Colorado 80309, United States
-
- Steven M. George
- Department of Chemistry and Biochemistry, ‡Department of Mechanical Engineering, University of Colorado, Boulder, Colorado 80309, United States
Journal
-
- Chemistry of Materials
-
Chemistry of Materials 28 (9), 2994-3003, 2016-04-26
American Chemical Society (ACS)
- Tweet
Details 詳細情報について
-
- CRID
- 1363951796054539392
-
- ISSN
- 15205002
- 08974756
-
- Data Source
-
- Crossref