$\hbox{Al}_{2}\hbox{O}_{3}$-Based RRAM Using Atomic Layer Deposition (ALD) With 1-$\mu\hbox{A}$ RESET Current
収録刊行物
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- IEEE Electron Device Letters
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IEEE Electron Device Letters 31 (12), 1449-1451, 2010-12
Institute of Electrical and Electronics Engineers (IEEE)
