A 1.2 V 12.8 GB/s 2 Gb Mobile Wide-I/O DRAM With 4 $\times$ 128 I/Os Using TSV Based Stacking
収録刊行物
-
- IEEE Journal of Solid-State Circuits
-
IEEE Journal of Solid-State Circuits 47 (1), 107-116, 2012-01
Institute of Electrical and Electronics Engineers (IEEE)
