Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAs

DOI Web Site Web Site 6 Citations

Journal

Journal of Crystal Growth

Journal of Crystal Growth 248 119-123, 2003-02

Elsevier BV

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CRID

1364233271227249664
DOI

10.1016/s0022-0248(02)01846-8
ISSN

00220248
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https://api.elsevier.com/content/article/PII:S0022024802018468?httpAccept=text/xml

https://api.elsevier.com/content/article/PII:S0022024802018468?httpAccept=text/plain
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