Electrically Active Traps at the 4H-SiC/SiO<sub>2</sub> Interface Responsible for the Limitation of the Channel Mobility
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- M. Bassler
- University of Erlangen-Nürnberg
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- Valeri V. Afanas'ev
- University of Leuven
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- Gerhard Pensl
- Friedrich-Alexander-Universität Erlangen-Nürnberg
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- M. Schulz
- University of Erlangen-Nürnberg
収録刊行物
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- Materials Science Forum
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Materials Science Forum 338-342 1065-1068, 2000-05-10
Trans Tech Publications, Ltd.