Effectiveness of CsX+ secondary ions in SIMS analysis of multilayer interface.

DOI NDL Digital Collections Web Site Web Site

Bibliographic Information

Other Title
  • 二次イオン質量分析法による多層薄膜界面の評価におけるＣｓＸ｀＋´二次イオン検出の有効性
  • 2ジ イオン シツリョウ ブンセキホウ ニ ヨル タソウ ハクマク カイメン
  • 二次イオン質量分析法による多層薄膜界面の評価におけるCsX^+二次イオン検出の有効性

Search this article

Abstract

Analysis of oxide/metal interface using SIMS has been investigated. In general, SIMS enables us to detect trace amounts of elements, but the change of the secondary ion yield at the interfaces results in ghost peaks during the depth profile analysis. This phenomenon makes it difficult to get accurate information on interdiffusion at the multilayer interface. In this study, use of Cs+ primary beam with detection of CsX+ cluster ions has been found to successfully eliminate those ghost peaks, since CsX+ cluster ions are free from matrix effects. The developed technique was used to analyze Si/ZnO and TiN/glass interfaces. Mechanisms with respect to bonding properties and stability of the coating films are discussed on the basis of this analysis.

Journal

  • BUNSEKI KAGAKU

    BUNSEKI KAGAKU 40 (4), 159-162, 1991

    The Japan Society for Analytical Chemistry

Keywords

Details 詳細情報について

Report a problem

Back to top