Oxygen Plasma Etching of Carbon Films Unintentionally Deposited on Chamber Walls in Magneto-Active Microwave Chemical Vapor Deposition System.

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  • JEON Hyeongmin
    Department of Electrical Engineering, Osaka University
  • HATTA Akimitsu
    Department of Elcctronic and Photonic Systems Engineering, Kochi University of Technology
  • ITO Toshimichi
    Department of Electrical Engineering, Osaka University

Bibliographic Information

Other Title
  • 有磁場マイクロ波プラズマ気相合成装置内に付着した炭素薄膜の酸素プラズマによるエッチング
  • ユウジバ マイクロハ プラズマ キソウ ゴウセイ ソウチ ナイ ニ フチャク シタ タンソ ハクマク ノ サンソ プラズマ ニ ヨル エッチング

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Abstract

Carbon films deposited unintentionally on substrate holder and reactor walls significantly influenced on diamond nucleation and growth using magneto-active microwave plasma chemical vapor deposition method (MPCVD). In this study, the etching process of such carbon films for a reproducible cleaning process has been investigated. In order to clarify the effect of magneto-active microwave pure-oxygen plasma, CO2 and CO products were mainly measured as functions of treatment time, plasma pressure, microwave power and substrate bias voltage. The results obtained show that there are three time regions in the etching process which may depend on the spatial distributions of the oxygen-related radicals and the carbon films in the chamber. It is found that relatively inefficient etching proceeded in the third stage, the origin of which is discussed.

Journal

  • Shinku

    Shinku 42 (3), 217-220, 1999

    The Vacuum Society of Japan

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