Zn Ion Implantation along the c Axis for Formation of Highly Resistive GaN Layers

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  • OISHI Toshiyuki
    Advanced Technology R & D Center, Mitsubishi Electric Corporation
  • MIURA Naruhisa
    Advanced Technology R & D Center, Mitsubishi Electric Corporation
  • SUITA Muneyoshi
    Advanced Technology R & D Center, Mitsubishi Electric Corporation
  • NANJO Takuma
    Advanced Technology R & D Center, Mitsubishi Electric Corporation
  • ABE Yuji
    Advanced Technology R & D Center, Mitsubishi Electric Corporation
  • OZEKI Tatsuo
    Advanced Technology R & D Center, Mitsubishi Electric Corporation
  • ISHIKAWA Hiroyasu
    Research Center for Nano-Device and System, Nagoya Institute of Technology
  • EGAWA Takashi
    Research Center for Nano-Device and System, Nagoya Institute of Technology

Bibliographic Information

Other Title
  • 結晶軸に沿ったＺｎイオン注入によるＧａＮの高抵抗化
  • ケッショウジク ニ ソッタ Zn イオン チュウニュウ ニ ヨル GaN ノ コウテイコウカ

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Abstract

Zn ion implantation along the c axis was investigated in order to fabricate a highly resistive GaN layer. It was calculated that Zn ions effectively transfer their energy to the crystal atoms due to the heavy mass. This energy transfer was able to create implanted damage, which induced the highly resistive layer. Secondary ion mass spectroscopy (SIMS) profile of Zn atoms revealed that Zn ions penetrated over 1μm into GaN layer at the ion energy of 350 keV. In the electrical characterization of the Zn implanted layer, it was found that thermal annealing at 500°C removed the Poole-Frenkel current and high sheet resistance of 2×1013Ω/sq was obtained. AlGaN/GaN HEMT (high electron mobility transistor) with Zn implanted isolation had good electrical characteristics.

Journal

  • Shinku

    Shinku 47 (4), 328-333, 2004

    The Vacuum Society of Japan

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