Fabrication techniques and electro-optical properties of 4H-SiC bluish-purple LEDs.

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  • ＳｉＣ青紫色発光ダイオードの製法と特性
  • SiC セイシショク ハッコウ ダイオード ノ セイホウ ト トクセイ

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Abstract

SiC bluish-purple light emitting diodes have been fabricated using a 4H-type off-angle SiC single-crystal substrate by the LPE method.<BR>Aluminum and nitrogen were used as acceptors and donnors, respectively. Aluminum was also added to n-type layers to produce D-A pair phosphors.<BR>Diffusion potential was 2.7 V which was 0.2 V larger than that of 6H-SiC blue LED. Brightness was 1 mcd at a forward current of 25 mA. Peak wavelength was 420 nm, and light output was 2 μW at 25 mA. Dependence of light output on large-pulse forward current (about 0.21.5 A) is also described.

Journal

  • Shinku

    Shinku 32 (11), 797-800, 1989

    The Vacuum Society of Japan

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