書誌事項
- タイトル別名
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- Fabrication techniques and electro-optical properties of 4H-SiC bluish-purple LEDs.
- SiC セイシショク ハッコウ ダイオード ノ セイホウ ト トクセイ
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SiC bluish-purple light emitting diodes have been fabricated using a 4H-type off-angle SiC single-crystal substrate by the LPE method.<BR>Aluminum and nitrogen were used as acceptors and donnors, respectively. Aluminum was also added to n-type layers to produce D-A pair phosphors.<BR>Diffusion potential was 2.7 V which was 0.2 V larger than that of 6H-SiC blue LED. Brightness was 1 mcd at a forward current of 25 mA. Peak wavelength was 420 nm, and light output was 2 μW at 25 mA. Dependence of light output on large-pulse forward current (about 0.21.5 A) is also described.
収録刊行物
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- 真空
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真空 32 (11), 797-800, 1989
一般社団法人 日本真空学会
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詳細情報 詳細情報について
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- CRID
- 1390001204065139584
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- NII論文ID
- 130000863186
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- NII書誌ID
- AN00119871
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- COI
- 1:CAS:528:DyaK3cXktlWltrs%3D
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- ISSN
- 18809413
- 05598516
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- NDL書誌ID
- 3257286
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
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- 抄録ライセンスフラグ
- 使用不可