Electrical properties of Al-doped and B-doped amorphous SiC:H films prepared by cosputtering.

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  • Ｃｏ‐ｓｐｕｔｔｅｒ法によるＡｌ及びＢ添加ａ‐ＳｉＣ：Ｈ薄膜の電気的特性
  • Co-sputterホウ ニ ヨル Al オヨビ B テンカ a SiC H

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Abstract

Groups III impurity (aluminum or boron) has been introduced into a-SiC:H by the cosputtering method. The dependence of the optical, electrical and opto-electronic properties on the imurity content has been investigated.<BR>In the range of the aluminum content z up to about 10-2, the photoconductive nature is maintained and the activation energy of dark conductivity changes, without a significant change in the optical band gap. This suggests the doping effect which is confirmed by the thermoelectric power measurements where the type of conduction changes from n to p with increasing z.<BR>From similar results for boron doped films, the doping efficiency is found to be higher for boron than for aluminium.

Journal

  • Shinku

    Shinku 33 (9), 733-737, 1990

    The Vacuum Society of Japan

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