Evaluation of Hafnium-Titanium-Oxide Thin Films Prepared by Reactive Sputtering.
-
- MATSUMOTO Hironaga
- Department of Electronics and Communications School of Science and Technology, Meiji University
-
- ANDO Kimio
- Department of Electronics and Communications School of Science and Technology, Meiji University
-
- MIURA Noboru
- Department of Electronics and Communications School of Science and Technology, Meiji University
-
- NAKANO Ryotaro
- Department of Electronics and Communications School of Science and Technology, Meiji University
Bibliographic Information
- Other Title
-
- Evaluation of Hafnium-Titanium-Oxide Thin Films Prepared by Reactivc Sputtering
Search this article
Abstract
Hafnium-titanium-oxide thin films with arbitrary composition are prepared by multi-target rf reactive sputtering using metallic targets of hafnium and titanium. The compositional ratio x = Ti/ (Hf + Ti) in the thin film is controlled exactly through rf power. The crystal structure of the hafnium-titanium-oxide thin film was identified as monoclinic at x<0.45 and amorphous at x≥0.45. Hafnium and titanium in the thin film are found to exist as mixtures of chemically bonded HfO2 and TiO2 from XPS spectra. The refractive index of the hafnium-titanium oxide thin film at 550 nm changes from 2.1 to 2.5 according to titanium composition, and the dispersion of the refractive index is found to follow a Lorentz oscillator model with 4 oscillators. The variation of the refractive index of the film is primarily due to the increase in the intensity of the oscillator strength S3 and S4, corresponding to the oscillator energies E3 (5.0 eV) and E4 (4.4 eV) of titanium oxide.
Journal
-
- Shinku
-
Shinku 45 (1), 18-25, 2002
The Vacuum Society of Japan
- Tweet
Keywords
Details 詳細情報について
-
- CRID
- 1390001204065436544
-
- NII Article ID
- 10007762692
-
- NII Book ID
- AN00119871
-
- ISSN
- 18809413
- 05598516
-
- NDL BIB ID
- 6067633
-
- Text Lang
- en
-
- Data Source
-
- JaLC
- NDL
- Crossref
- CiNii Articles
-
- Abstract License Flag
- Disallowed