Evaluation of Hafnium-Titanium-Oxide Thin Films Prepared by Reactivc Sputtering

DOI Web Site 参考文献11件
  • MATSUMOTO Hironaga
    Department of Electronics and Communications School of Science and Technology, Meiji University
  • ANDO Kimio
    Department of Electronics and Communications School of Science and Technology, Meiji University
  • MIURA Noboru
    Department of Electronics and Communications School of Science and Technology, Meiji University
  • NAKANO Ryotaro
    Department of Electronics and Communications School of Science and Technology, Meiji University

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タイトル別名
  • Evaluation of Hafnium-Titanium-Oxide Thin Films Prepared by Reactive Sputtering.

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Hafnium-titanium-oxide thin films with arbitrary composition are prepared by multi-target rf reactive sputtering using metallic targets of hafnium and titanium. The compositional ratio x = Ti/ (Hf + Ti) in the thin film is controlled exactly through rf power. The crystal structure of the hafnium-titanium-oxide thin film was identified as monoclinic at x<0.45 and amorphous at x≥0.45. Hafnium and titanium in the thin film are found to exist as mixtures of chemically bonded HfO2 and TiO2 from XPS spectra. The refractive index of the hafnium-titanium oxide thin film at 550 nm changes from 2.1 to 2.5 according to titanium composition, and the dispersion of the refractive index is found to follow a Lorentz oscillator model with 4 oscillators. The variation of the refractive index of the film is primarily due to the increase in the intensity of the oscillator strength S3 and S4, corresponding to the oscillator energies E3 (5.0 eV) and E4 (4.4 eV) of titanium oxide.

収録刊行物

  • 真空

    真空 45 (1), 18-25, 2002

    一般社団法人 日本真空学会

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