書誌事項
- タイトル別名
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- Optimization of Pretreatment Conditions for Electroless Ni-P Plating Simultaneously on Various Substrates for High Density Packaging
- コウミツド ジッソウ オウヨウ オ モクテキ ト シタ シュジュ ノ キバン ザイリョウ エ ノ ムデンカイ Ni-Pメッキ ノ マエショリ ト ソノ ジョウケン ノ サイテキ カ
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Miniaturization of electronic devices has been strongly pursued to facilitate ubiquitous computing. High-density packaging technology is a promising candidate for reducing device size. For producing high-density packaging, metallization is an important process. Electroless nickelphosphorus plating, the most popular metallization method, is available for insulator materials such as silicon nitride (SiN) and polyimide (PI). For this study, we investigated three materials for substrates, PI as a resin, SiN as a passivation film, and aluminum (Al) as a metal. The values of adhesion strength between the electroless Ni-P film and three substrates were evaluated quantitatively using a stud pull test. A commercially available weak alkaline degreasing agent (aluminum cleaner NE-6; Meltex Inc.) is effective for metallization of PI, SiN, and Al simultaneously without a zincate process. These three materials are common used for a wafer level chip size package (W-CSP), which is a newly developed high-density packaging technology. Using the degreasing agent, we obtain sufficient adhesion strength for three substrates: PI, SiN and Al.The optimum concentration of the degreasing agent is 45 g/dm3 for all substrate materials. Results show that the electroless Ni-P plating process is suitable for metallization of high-density packaging.
収録刊行物
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- 表面技術
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表面技術 64 (5), 302-306, 2013
一般社団法人 表面技術協会
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詳細情報 詳細情報について
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- CRID
- 1390001204119263616
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- NII論文ID
- 10031171501
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- NII書誌ID
- AN1005202X
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- COI
- 1:CAS:528:DC%2BC3sXhtFaqtL7N
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- ISSN
- 18843409
- 09151869
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- NDL書誌ID
- 024655830
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
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- 抄録ライセンスフラグ
- 使用不可