Effects of External Shear Stress on the Smallest Double Kink Nucleation Process in Si
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- Masuda Kinichi
- Department of Materials Science and Engineering, Tokyo Institute of Technology
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- Ushio Hirofumi
- Department of Physics, Yokohama City University
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- Kojima Kenichi
- Department of Physics, Yokohama City University
書誌事項
- タイトル別名
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- Effects of External Shear Stress on the
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説明
A tight-binding type electronic theory (molecular approximation) is used to calculate the formation energy of the double kink Edk for a 1⁄2[110](1\bar11) (perfect glide set) screw dislocation in covalent semiconductor Si. Effects of external shear stress on the double kink nucleation process are investigated in detail. It is shown that the calculated stress dependence of the Edk is in good agreement with the experimental results of the activation energy for the screw dislocation motion in Si.
収録刊行物
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- Ｊｏｕｒｎａｌ ｏｆ ｔｈｅ Ｐｈｙｓｉｃａｌ Ｓｏｃｉｅｔｙ ｏｆ Ｊａｐａｎ
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Ｊｏｕｒｎａｌ ｏｆ ｔｈｅ Ｐｈｙｓｉｃａｌ Ｓｏｃｉｅｔｙ ｏｆ Ｊａｐａｎ 54 (2), 598-603, 1985
一般社団法人 日本物理学会
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詳細情報 詳細情報について
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- CRID
- 1390001204186131712
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- NII論文ID
- 110001967657
- 210000092533
- 130003898561
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- NII書誌ID
- AA00704814
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- BIBCODE
- 1985JPSJ...54..598M
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- COI
- 1:CAS:528:DyaL2MXhsVWhsrw%3D
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- ISSN
- 13474073
- 00319015
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- NDL書誌ID
- 3015608
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- 本文言語コード
- en
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- データソース種別
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- NDLサーチ
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