Existence of Mobility Edge in Amalgamation Bands of Mixed Crystals
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- Nakahara Jun’ichir\={o}
- Department of Physics, Faculty of Science, Hokkaido University
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- Minomura Shigeru
- Department of Physics, Faculty of Science, Hokkaido University
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- Kukimoto Hiroshi
- Imaging Science and Engineering Laboratory, Tokyo Institute of Technology
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- Minami Fujio
- National Institute for Research in Inorganic Materials
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- Era Koh
- National Institute for Research in Inorganic Materials
Bibliographic Information
- Other Title
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- Existence of Mobility Edge in Amalgamat
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Abstract
It is reported that the temperature dependence of luminescence intensity in AlxGa1−xAs and Cd1−xMnxTe obeys the same relation 1⁄(1+A exp (T⁄T0)) as is observed in amorphous Si:H and chalcogenide glasses. This temperature dependence is well understood by the assumption that a mobility edge exists near the edge of amalgamation-type bands in mixed crystals, and that localized states exist continuously below the mobility edge. The same dependence is observed for the luminescence intensity from bound magnetic polarons in Cd.95Mn.05Te.
Journal
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- Journal of the Physical Society of Japan
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Journal of the Physical Society of Japan 56 (7), 2252-2255, 1987
THE PHYSICAL SOCIETY OF JAPAN
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Keywords
Details 詳細情報について
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- CRID
- 1390001204186210048
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- NII Article ID
- 110001960489
- 210000093409
- 130003899552
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- NII Book ID
- AA00704814
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- BIBCODE
- 1987JPSJ...56.2252N
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- COI
- 1:CAS:528:DyaL2sXltVGnsbw%3D
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- ISSN
- 13474073
- 00319015
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- NDL BIB ID
- 3139566
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- Text Lang
- en
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed
