Hot carrier double injection in n-InSb

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  • Hot Carrier Double Injection in <I>n</I>-InSb

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The double injection phenomena in n-InSb were studied theoretically and experimentally over a wide range of current density at 77°K. As the electric field E increases, electrons and holes are injected into the bulk and the current density j is approximately proportional to E3⁄2 for high injection levels at fields up to a few tens of volt/cm. As the field increases further the j–E curve becomes flat. In the high current region, a current-controlled negative resistances is observed.<BR>The theory for the double injection was extended to include hot electron effects. In n-InSb, the ambipolar density velocity can change its sign from that of the low field density velocity, if the field is high enough to heat up the electrons, and the injected hole density is sufficiently high. The flattening in the j–E curve was explained theoretically taking into account the sign change in the density velocity. The sign change in combination with the blocking of the hole current flow at the cathode also accounts for the negative resistance.

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