Finely Controlled Approaches to Formation of Heusler-Alloy/Semiconductor Heterostructures for Spintronics

DOI Web Site Web Site 被引用文献12件 参考文献70件

この論文をさがす

抄録

We present recent progress of the low-temperature growth of Heusler-alloy/silicon(Si) or Heusler-alloy/germanium(Ge) heterostructures and of their applications for spintronics. First, a concept of the realization of the low-temperature heteroepitaxy for high-quality Heusler alloy/Si or Heusler alloy/Ge heterostructures is shown. Despite very low-growth temperatures, B2 or L21 ordered full-Heusler alloys are achieved. Next, by applying this concept to the growth of Ge on a Heusler alloy or a Heusler alloy on another Heusler alloy, we can also achieve unusual heterostructures for the possibility of novel spintronics applications. Finally, we demonstrate the pure spin current transport in Cu and Ge using these Heusler-alloy spin injectors and detectors. Our approaches will open new avenues for developing high-performance spintronic applications with Heusler alloys.

収録刊行物

被引用文献 (12)*注記

もっと見る

参考文献 (70)*注記

もっと見る

関連プロジェクト

もっと見る

キーワード

詳細情報 詳細情報について

問題の指摘

ページトップへ