Chemical Analysis of Impurity Boron Atoms in Diamond Using Soft X-Ray Emission Spectroscopy
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- MURAMATSU Yasuji
- Graduate School of Engineering, University of Hyogo
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- IIHARA Junji
- Sumitomo Electric Industries, Ltd.
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- TAKEBE Toshihiko
- Sumitomo Electric Industries, Ltd.
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- DENLINGER Jonathan D.
- Advanced Light Source, Lawrence Berkeley National Laboratory
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Abstract
To analyze the local structure and/or chemical states of boron atoms in boron-doped diamond, which can be synthesized by the microwave plasma-assisted chemical vapor deposition method (CVD-B-diamond) and the temperature gradient method at high pressure and high temperature (HPT-B-diamond), we measured the soft X-ray emission spectra in the CK and BK regions of B-diamonds using synchrotron radiation at the Advanced Light Source (ALS). X-ray spectral analyses using the fingerprint method and molecular orbital calculations confirm that boron atoms in CVD-B-diamond substitute for carbon atoms in the diamond lattice to form covalent B-C bonds, while boron atoms in HPT-B-diamond react with the impurity nitrogen atoms to form hexagonal boron nitride. This suggests that the high purity diamond without nitrogen impurities is necessary to synthesize p-type B-diamond semiconductors.
Journal
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- Analytical Sciences
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Analytical Sciences 24 (7), 831-834, 2008
The Japan Society for Analytical Chemistry
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Details 詳細情報について
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- CRID
- 1390001204256801024
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- NII Article ID
- 130004441666
- 10025204721
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- NII Book ID
- AA10500785
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- ISSN
- 13482246
- 09106340
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- NDL BIB ID
- 9566218
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- Text Lang
- en
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed