Design Consideration for Immersion 193: Embedded Barrier Layer and Pattern Collapse Margin
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- Wang Deyan
- Rohm and Haas Electronic Materials
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- Caporale Stefan
- Rohm and Haas Electronic Materials
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- Audes Cecily
- Rohm and Haas Electronic Materials
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- Cheon Kap-Soo
- Rohm and Haas Electronic Materials
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- Xu Cheng Bai
- Rohm and Haas Electronic Materials
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- Trefonas Peter
- Rohm and Haas Electronic Materials
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- Barclay George
- Rohm and Haas Electronic Materials
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In immersion lithography the optical path between the lens element and the photoresist is currently water. Defects have been identified as a major roadblock for the introduction of immersion lithography to real device manufacturing. To address these immersion specific defect issues we have developed a novel additive approach for controlling the resist surface and it's interaction with water.[1] These additives have been designed to segregate within the resist film and migrate to the resist surface. Due to the high local concentration of these additives at the resist/water interface they create a very hydrophobic surface and allow control of surface properties. Data will be presented on this novel concept, illustrating the control of leaching and resist surface hydrophobicity. The use of this new technique allows control of leaching, resist surface contact angles and immersion specific defects.<br>As critical dimensions (CDs) in the semiconductor industry shrink, pattern collapse becomes a problem. We classify pattern collapse into three classes: adhesion failure, pattern strength failure and pattern film loss failure, and relate these to the capillary forces which drive failure. In this paper, the correlation of PCM with Ψ (carbon heteroatom ratio) of polymer composition, resist profile, PEB temperature and time are discussed. Finally, mechanistic understanding of pattern failure and subsequent correlations gives us the tools to design advanced resist with excellent PCM.
収録刊行物
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- Journal of Photopolymer Science and Technology
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Journal of Photopolymer Science and Technology 20 (5), 687-696, 2007
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詳細情報 詳細情報について
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- CRID
- 1390001204323847552
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- NII論文ID
- 130004464603
- 40015602547
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- NII書誌ID
- AA11576862
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- COI
- 1:CAS:528:DC%2BD2sXot1Wmtrg%3D
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- ISSN
- 13496336
- 09149244
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- NDL書誌ID
- 8919011
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可