Mitigation of Low Outgassing and Small Line Edge Roughness for EUVL Resist

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  • Watanabe Takeo
    Laboratory of Advanced Science and Technology for Industry, University of Hyogo
  • Kinoshita Hiroo
    Laboratory of Advanced Science and Technology for Industry, University of Hyogo
  • Hamamoto Kazuhiro
    Laboratory of Advanced Science and Technology for Industry, University of Hyogo
  • Hada Hideo
    Advanced Material Development Division 1, Tokyo Ohka Kogyo Co., Ltd.
  • Komano Hiroshi
    Advanced Material Development Division 1, Tokyo Ohka Kogyo Co., Ltd.

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Abstract

Carbon contamination which is due to the hydrocarbons reduces the reflectivity of Mo/Si multilayer-mirror and affects the resolution of the mask in EUVL vacuum exposure. For the high-annealing-type chemically amplified (CA) resist based on the polyhydroxy styrene (PHS) resin, resists which contains PGME, MAK and MMP as a solvent have lower outgassing characteristics under EUV irradiation. This characteristics is own to the oxygen contents and the chemical structure of the solvents. The high-annealing-type CA resist which employs PGME as solvent has lowest outgassing species under EUV irradiation. To mitigation of the small line edge roughness (LER), the main-decomposition-reaction CA resist is one of the candidates. From the outgassing measurement, hydrocarbons partial pressure of CA resist based on the methacrylate under EUV irradiation is in the order of 10-8, which is a littler bit higher than that of high annealing type resist based on polyhydroxy styrene (PHS) resin. Methacrylate resist has a capability to be employed in EUVL to reduce the LER.

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