Fidelity of Photo-nanoimprint

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  • Hiroshima Hiroshi
    MIRAI, Advanced Semiconductor Research Center (ASRC) National Institute of advanced Industrial Science and Technology (AIST)

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Abstract

Patterns were fabricated by photo-nanoimprint using a Si mold having extremely smooth patterns with a line edge roughness (LER) of 0.58 nm. The LERs of photo-nanoimprint patterns were evaluated by an off-line analysis of scanning electron microscope images using the scaling analysis. The LER of photo-nanoimprint pattern for UV exposure dose of 0.01 - 1 J/cm2 is not affected by the exposure dose and takes as low as 0.64 - 0.78 nm. Analyses of LER using white noise subtraction revealed that the LER profile originated in the Si mold pattern of the scaling analysis is preserved in photo-nanoimprint patterns.

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