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- Hiroshima Hiroshi
- MIRAI, Advanced Semiconductor Research Center (ASRC) National Institute of advanced Industrial Science and Technology (AIST)
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抄録
Patterns were fabricated by photo-nanoimprint using a Si mold having extremely smooth patterns with a line edge roughness (LER) of 0.58 nm. The LERs of photo-nanoimprint patterns were evaluated by an off-line analysis of scanning electron microscope images using the scaling analysis. The LER of photo-nanoimprint pattern for UV exposure dose of 0.01 - 1 J/cm2 is not affected by the exposure dose and takes as low as 0.64 - 0.78 nm. Analyses of LER using white noise subtraction revealed that the LER profile originated in the Si mold pattern of the scaling analysis is preserved in photo-nanoimprint patterns.
収録刊行物
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- Journal of Photopolymer Science and Technology
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Journal of Photopolymer Science and Technology 18 (4), 537-542, 2005
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詳細情報 詳細情報について
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- CRID
- 1390001204324802048
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- NII論文ID
- 130004464452
- 40006743937
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- NII書誌ID
- AA11576862
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- ISSN
- 13496336
- 09149244
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- NDL書誌ID
- 7338503
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
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- 使用不可