Structural Changes of Photoresist on Wafer Studied by Pyrolysis-GC/MS Combined with Micro-GPC
-
- Taguchi Yoshihiko
- Toray Research Center Inc.
-
- Kawai Kazuki
- Toray Research Center Inc.
-
- Otsuki Akiko
- Toray Research Center Inc.
-
- Man Naoki
- Toray Research Center Inc.
-
- Mochida Kenji
- JSR Corporation, Semiconductor Materials Laboratory, Fine Electronic Research Laboratories
-
- Nakamura Shinichi
- JSR Corporation, Semiconductor Materials Laboratory, Fine Electronic Research Laboratories
-
- Kimura Tooru
- JSR Corporation, Semiconductor Materials Laboratory, Fine Electronic Research Laboratories
この論文をさがす
抄録
A novel method for the direct analysis of photoresist pattern was developed on the basis of Pyrolysis-GC/MS combined with micro-GPC. Firstly, a new sampling technique allowed us to collect the surface and the core of the photoresist pattern separately. Moreover, μGPC and Py-GC/MS analyses provide the information for the distribution of resist ingredient inside resist pattern, which includes original polymer, reacted polymer, and photo acid generator through the ArF patterning process. This novel analytical method can provide remarkably helpful information about identifying proper control knobs for lithographic performance of ArF resist and for next generation lithography.
収録刊行物
-
- Journal of Photopolymer Science and Technology
-
Journal of Photopolymer Science and Technology 27 (1), 41-48, 2014
フォトポリマー学会
- Tweet
キーワード
詳細情報 詳細情報について
-
- CRID
- 1390001204324829824
-
- NII論文ID
- 130004678317
-
- NII書誌ID
- AA11576862
-
- ISSN
- 13496336
- 09149244
-
- NDL書誌ID
- 025604310
-
- 本文言語コード
- en
-
- データソース種別
-
- JaLC
- NDL
- Crossref
- CiNii Articles
-
- 抄録ライセンスフラグ
- 使用不可