Polysilane Anti-Reflective Layer for Deep UV Lithography.

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Bottom Anti-Reflective Layer (ARL) is essential for deep UV lithography in order to reduce the Critical Dimension (CD) variations caused by reflection. We have newly applied polysilane for spin-coated ARL which can be etched much faster than resist. This ARL process is named the PolySilane Anti-Refective Layer (PSARL) process. Poly(diphenylsilane), poly(phenylmethylsilane), and copolymer of these polysilanes are evaluated with a view to their application as ARL materials and the results obtained are presented in this paper. Characteristics of PSARL made of poly(diphenylsilane-co-phenylmethylsilane) with the optimized copolymer ratio are as follows. The refractive index for PSARL at 248nm is n=2.05, k=0.29, and PSARL can act as the anti-reflective layer for KrF excimer laser lithography. A good resist profile is achieved without any footing and residue on PSARL. It can be etched 2.05 times faster than the resist and vertically etched using resist pattern as the etch mask. The PSARL process realizes thin resist process and enlarges lithographic process window.

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