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Study of PAG Material Design for ArF Immersion Photoresist
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- Utsumi Yoshiyuki
- TOKYO OHKA KOGYO CO., LTD.
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- Komoro Yoshitaka
- TOKYO OHKA KOGYO CO., LTD.
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- Kawaue Akira
- TOKYO OHKA KOGYO CO., LTD.
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- Seshimo Takehiro
- TOKYO OHKA KOGYO CO., LTD.
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- Hada Hideo
- TOKYO OHKA KOGYO CO., LTD.
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- Nakamura Tsuyoshi
- TOKYO OHKA KOGYO CO., LTD.
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- Yoshii Yasuhiro
- TOKYO OHKA KOGYO CO., LTD.
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- Onodera Junichi
- TOKYO OHKA KOGYO CO., LTD.
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- Ogawa Satoshi
- Department of Chemical Engineering, Faculty of Engineering, Iwate University
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Description
One of some critical issues for ArF immersion lithography was leaching of resist components to water fluid. To decrease the leaching amount, increase hydrophobicity of Photo Acid Generator (PAG) was one of the most effective methods. The hydrophobicity of PAG was detected by simulating Log-P value and measuring Retention Time (RT) on reversed phase chromatography. However, simple high hydrophobic PAG indicated high defect number. The improvement of this issue was achieved by introducing acid cleavable group into PAG cation frame. It may suggest that PAG material proposed on this study showed low leaching amount and low defect risk as new concept for ArF immersion resist.
Journal
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- Journal of Photopolymer Science and Technology
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Journal of Photopolymer Science and Technology 21 (6), 719-723, 2008
The Society of Photopolymer Science and Technology(SPST)
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Details 詳細情報について
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- CRID
- 1390001204325869312
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- NII Article ID
- 130004833233
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- NII Book ID
- AA11576862
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- COI
- 1:CAS:528:DC%2BD1MXhtVSktbY%3D
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- ISSN
- 13496336
- 09149244
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- NDL BIB ID
- 9756073
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- Text Lang
- en
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- Data Source
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- JaLC
- NDL Search
- Crossref
- CiNii Articles
- OpenAIRE
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- Abstract License Flag
- Disallowed