Influence analysis of removal rate in Si-chemical mechanical planarization/ polishing

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  • Si-CMPの研磨レートに及ぼす要因分析
  • Si-CMP ノ ケンマ レート ニ オヨボス ヨウイン ブンセキ

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Abstract

Chemical mechanical planarization/polishing (CMP) is generally used for planarization of Si wafer substrates for semiconductor devices. In CMP, the removal rate decreases with increasing polishing time due to deterioration of the pad surface asperity. Further, the removal rate increases with increasing slurry particle concentration. However, the relationships between the removal rate and other polishing parameters and various phenomena have not been discussed sufficiently. Here, we analyze the effects of various parameters on the removal rate of Si-CMP. In particular, we discuss the relationship between the removal rate and the following parameters: pad surface asperity, vibration acceleration of the polishing head, coefficient of friction, and pad surface temperature. We clarify the effects of each parameters on the removal rate. The results indicated that the removal rate decreases with increasing polishing head vibration. Moreover, the removal rate was proportional to the coefficient of friction and the pad temperature, however, this trend was markedly affected by the slurry particle concentration.

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