Synthesis of High Purity [Ta(dpm), ]Cl for Preparation of Ta205 Fhin Tilrns by MOCVD

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Other Title
  • MOCVD法によるTa2O5薄膜作製用原料としての高純度[Ta(dpm)4]Clの合成
  • Synthesis of High Purity (Ta(dpm)4)Cl for Preparation of Ta2O5 Fhin Tilms by MOCVD.

Abstract

Synthesis of highly pure dipivaloylmethane (Hdpm) chelates of Tantalum(V) was investigated. The chelates were synthesized by the reaction of the ligands with Tantalum pentachlcride using anhydrous solvents under high purity argon gas atmosphere.<BR>[Ta(dpm)4]Cl was syntesized as a new source material for p reparation of Ta2O5 thin films by MOCVD. [Ta(dpm)4]Cl was in good agreement with the calculated value in the results of ICP and elemental analysis, and was confirmed by FT-IR, 1H-NMR, 13C-NMR, and TGDTA. Vaporization of impurities was not found in TG measurement. The tantalum complex vaporized in the range of 220 to 360 °C without residue.<BR>[Ta(dpm)4]Cl proved to be superior in volatility and purity for the MOCVD source material.

Journal

  • NIPPON KAGAKU KAISHI

    NIPPON KAGAKU KAISHI 1992 (12), 1515-1517, 1992-12-10

    The Chemical Society of Japan

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