Vapor Phase Growth of Stannic Oxide Crystals

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  • MATSUSHITA Toru
    Department of Applied Chemistry, Faculty of Engineering, Hokkaido University
  • YAMAI Iwao
    Department of Applied Chemistry, FacUlty of Engineering!, Nagoya University

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Other Title
  • 酸化スズ結晶の気相成長
  • 酸化すず結晶の気相成長

Description

Raw material, SnO2 powder mixed with graphite or tin powcer, was placed in a porcelain crucible and heated at 1200° C in an electric furnace for 2 hrs. Material containing 5 to 10 wt % of Sb208 was also used to obtain Sb-doped crystals. SnO2 needle crystals were grn above the raw material.<BR>It is supposed that SnO vapor was formed through the following reactions:<BR>SnO2- C (or 1/2 C) SnO + CO (or 1/2 CO2) SnO2- Sn 2 SnO<BR>and SnO2 crystals were subsequently deposited from the vapor phase with reoxidation of SnO.<BR>It was found that suitable contents of graphite were 5 to 7 wt %, and those of tin were 25 to 30 wt %. The considerable influence of a gap width between crucible and lid on the growth of SnO2- crystal was observed.<BR>Undoped SnO2 crystals which were colorless and transparent, were grown up to 50 x 0.06 X 0.06 mm, and Sb-doped ones which were grayish blue and transparent, up to 30 X 1 X 0.1 mm. Electrical resistivity of undoped crystals was 50 to 100 I2-cm at room temperature showing non-metallic conduction, and activation energy was 0.11 to O.15 eV. On the other hand, electrical resistivity of Sb-doped crystals was 2.4 10-3 Si-cm at room temperaturt showing metallic conduction, and the temperature coefficient of the resistivity was 2.3 x 10-6 S2-cmi° C.

Journal

  • NIPPON KAGAKU KAISHI

    NIPPON KAGAKU KAISHI 1974 (10), 1893-1896, 1974-10-10

    The Chemical Society of Japan

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