プラズマＣＶＤ中入射イオンエネルギーのａ‐Ｓｉ：Ｈ膜表面への影響に関する分子動力学解析

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  • Molecular Dynamics Study of Influence of Energetic Ions in Plasma CVD on a-Si:H Film Surfaces.
  • プラズマ CVDチュウ ニュウシャ イオン エネルギー ノ a-Si H マク

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Molecular dynamics simulations of energetic SiH3 ion particles of up to about 150 eV incident on a-Si : H film surfaces have been performed. The influence of the incident kinetic energy on the surface temperature, and behavior of the SiH3 particles entering the surface layer were then studied. As a result of the simulations, it was found that when the incident kinetic energy exceeds about 10 eV. an average surface temperature during 0.5 ps after incidence reaches more than 1000 K. with the bulk temperature of the film kept at 450 K. In addition, it was found that although the incident SiH3 particles of up to about 10 eV stay on the surface. Si atoms of SiH3 particles with energies of 10-20 eV start to migrate into the surface layer, and that when the incident energy exceeds 100 eV. the Si entering depth increases rapidly, and it becomes 13.52 A in the case of 150 eV. It is thought that it is necessary to control the ion bombardment energy in plasma CVD process in order to improve a-Si : film.

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