Electrical and Mechanical Properties of Si-B-N Films Made by Plasma-Enhanced Chemical Vapor Deposition.

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  • プラズマＣＶＤにより作製したＳｉ‐Ｂ‐Ｎ膜の電気的，機械的特性
  • プラズマ CVD ニ ヨリ サクセイシタ Si-B-N マク ノ デンキテキ

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The physical, electrical and structural properties including optical band gap, microhardness, residual stress, IR spectra and resistivity of Si-B-N films made by plasma-enhanced CVD using a SiH4-N2-B2H6 gas mixture were studied. The films were mainly composed of mixtures of Si-N compounds and B-N compounds, and the compositional ratio of silicon to nitrogen in the Si-N compounds was almost constant, regardless of the quantity of boron added in Si-B-N films. The compressive stress increased and the microhardness decreased with increasing quantity of B-N compound in Si-B-N films. Boron atoms incorporated in deposited Si-B-N films with silicon-rich composition resulted in a decrease in the resistivity of the films. Good correlation between the resistivity and the optical band gap in the films was observed, by leading to the conclusion that the resistivity of Si-B-N films can be estimated fairly accurately measurement of the optical band gap.

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