書誌事項
- タイトル別名
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- Development of Exposure Method for Wiring Pattern on High Aspect Structures
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説明
A crystal oscillator needs to be wired on the both top and sidewalls in order to detect electrical charge. Photolithography is expected to fabricate finer pattern than mask evaporation. However, coating resist on an edge of the substrate and patterning the sidewall are difficult. In this study, photoresist (AZ-p4620) was successfully coated on all surfaces and edges of the substrate by spray coating. And resist on all surfaces was patterned by using inclined exposure method. A line pattern of 20μm width was obtained on the sidewall at 150μm depth.
収録刊行物
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- 電気学会論文誌Ｅ（センサ・マイクロマシン部門誌）
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電気学会論文誌Ｅ（センサ・マイクロマシン部門誌） 125 (6), 280-281, 2005
一般社団法人 電気学会
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詳細情報 詳細情報について
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- CRID
- 1390001204459998720
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- NII論文ID
- 10015671751
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- NII書誌ID
- AN1052634X
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- ISSN
- 13475525
- 13418939
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- Crossref
- CiNii Articles
- OpenAIRE
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- 抄録ライセンスフラグ
- 使用不可
